pnp bd684 to3 (temporary part number) temporary datasheet 23/10/2012 comset semiconductors 1 | 3 silicon darlington power transistors pnp eptaxial-base transistors in monolithic darlington circuit for audio and video applications. they are mounted in jedec to-3 metal package. compliance to rohs absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage -140 v v cbo collector-base voltage -140 v v ebo emitter-base voltage -5 v i c collector current i c -4 a i cm -6 i bm base current (peak value) -0.1 a p t total power dissipation @ t mb = 25c 65 w- t j junction temperature 150 c t st g storage temperature -65 to +150 c thermal characteristics symbol ratings value unit r thj-mb thermal resistance, junction to mouting base 3.12 k/w r thj-a thermal resistance, junction to ambient in free air 100 k/w
pnp bd684 to3 (temporary part number) temporary datasheet 23/10/2012 comset semiconductors 2 | 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cut-off current i e =0 , v cb = - 140 v - - -0,2 ma i e =0 , v cb = -1/2v cbomax t j = 150c - - -1 i ceo collector cut-off current i b =0 , v ce = -1/2v ceomax - - -0,2 ma i ebo emitter cut-offcurrent i c =0, v eb =-5 v - - -5 ma v ce(sat) collector-emitter saturation voltage (*) i c =-1.5 a, i b =-6 ma - - -2 v h fe dc current gain (*) v ce =-3 v, i c =-500 ma - 2000 - v ce =-3 v, i c =-1,5 a 750 - - v ce =-3 v, i c =-4 a - 750 - v be base-emitter voltage (*) v ce =-3 v, i c =-1,5 a - - -2,5 v h fe small signal current gain v ce =-3 v, i c =-1,5 a, f= 1 mhz 10 - - f hfe ut-off frequency v ce =-3 v, i c =-1,5 a - 60 - khz v f diode forward voltage i f =-1,5 a - -1,5 - v i (sb) second-breakdown collector current v ce =-50 v, t p = 20ms,non rep. without heatsink -0,8 - - a t on turn-on time -i con = -1,5a, i bon = -i boff = -6ma v cc =30v - 0,8 2 s t of f turn-off time - 4,5 8 (*) measured under pulse conditions : t p <300s, <2%.
pnp bd684 to3 (temporary part number) temporary datasheet 23/10/2012 comset semiconductors 3 | 3 mechanical data case to-3 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semic onductors assumes no responsibility for the consequences of use of such information nor for any infr ingement of patents or other rights of th ird parties which may results from its use. data are subject to change without notice. comset semiconductors makes no warranty, representation or guarantee regar ding the suitability of its pr oducts for any particular purpose, nor does comset semiconductors assume any li ability arising out of the application or use of any product an d specifically disclaims any and all liability, including without limitation co nsequential or incidental damages. comset semiconductors? produ cts are not authorized for use as critical compone nts in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector
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